| PART |
Description |
Maker |
| XAL1010-102ME XAL1010-103ME XAL1010-152ME XAL1010- |
High Temperature Shielded Power Inductors
|
Coilcraft lnc.
|
| BTS725-L1 BTS725-L1E3240 |
2 Channel PROFET Smart High Side Powe...
|
Infineon
|
| PE2235-30 |
HIGH POWE R DIRECTIONAL COUPLER FREQUENCY RANGE: 4-12 GHz
|
Pasternack Enterprises, Inc.
|
| 67643-2911 0676432911 |
Universal Serial Bus (USB) Shielded I/O Receptacle, Right Angle, Type A, High- Temperature Black Nylon
|
Molex Electronics Ltd.
|
| GM195 |
P N P S I L I CO N P L A N A R M E D I UM POWE R T R A N S I S T O R
|
E-Tech Electronics LTD
|
| 2SK1611 |
V(dss): 800V; silicon N-channel powe F-MOS FET. For high-speed switching, for high frequency power amplification
Silicon N-Channel Power F-MOS FET
|
Panasonic Semiconductor
http://
|
| BD7542SFVM BD7541SG BD7541SG-TR BD7541G BD7541G-TR |
Low Powe Input-Output Full Swing Operational Amplifier
|
ROHM
|
| BCM8220 |
2.488/ 2.667 GBPS ULTRA LOW POWE SONET/SDH TRANSCEIVER
|
BOARDCOM[Broadcom Corporation.]
|
| 157AVG063MGBJ 397AVG035MGBJ 126AVG160MGBJ 337AVG01 |
Small Size - High Temperature ?Low ESR ?High Ripple Current ?Stable with Temperature ?High Frequency
|
Illinois Capacitor, Inc...
|
| DR127-100-R DR127-150-R DR127-101-R DR127-102-R DR |
High power density, high efficiency, shielded inductors
|
List of Unclassifed Man...
|
| NV2RZDC12V0.64 NV2RZDC12V0.93 NV2R NV2RSDC12V0.93 |
Withstands high temperature, operating under 105 ambient temperature
|
DB Lectro Inc.
|
| MPXV5050VC6T1 |
High Temperature Accuracy Integrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated
|
FREESCALE[Freescale Semiconductor, Inc]
|
